| 초록 |
Here we fabricated electrolyte gate transistors (EGTs) using ZnO (n-type) and PEDOT:PSS (p-type) as channel materials, MAPbI3 and MAPbBr3 as gate insulator, and PEDOT:PSS as a gate electrode. All the components were formed by simple spin coating process. The AFM and XRD analysis revealed that perovskite films have smooth surface morphology (RMS: 45.44nm for MAPbI3, 17.97 nm for MAPbI3-xBrx) and hexagonal/cubic crystal structures. The EGT, using ZnO and MAPbI3, showed typical n-type transistors behavior with low threshold voltage (Vth) of 1.1 V and field effect mobility of 0.047 cm2/Vs. The device with PEDOT:PSS and perovskite exhibited p-type switching property. This result suggests that electrical double layer (EDL) were formed in EGTs with MAPbI3 (or MAPbBr3) due to the electrolyte property of perovskite. Because of this high capacitance (C=3.4 μF/cm2) the device can exhibit low operation voltage and moderated charge mobility. |
