| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Large-area fabrication of ZnO nanostructure using direct nanoimprint lithography for its application to field effect transistors |
| 초록 |
Recently many researches on ZnO nanowire-based field effect transistor were performed due to its sensing and power generation abilities. It has been fabricated by synthesizing ZnO nanowires using bottom-up approaches and integrating them with metal contacts. However low throughput in assembly of this method limits its application. We demonstrate fabrication of ZnO nanowire-based field effect transistor using direct patterning of ZnO-sol. ZnO-sol was patterned as nanowire between metal electrodes on substrate by direct nanoimprint lithography using polymer mold. ZnO-sol was converted to ZnO-gel by UV treatment and following thermal annealing. The effect of annealing temperature is analyzed and the characteristic of the fabricated device is characterized electrically. This method can provide a large area integration of ZnO nanowire-based field effect transistor on flexible polymer substrate at relatively low temperature. |
| 저자 |
이지혜1, 이원석2, 김사라1, 박인규2, 정준호1
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| 소속 |
1한국기계(연), 2한국과학기술원 기계공학과 |
| 키워드 |
zno; nanoimprint; transistor; sol-gel
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| E-Mail |
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