| 학회 | 한국공업화학회 |
| 학술대회 | 2012년 봄 (05/09 ~ 05/11, 김대중컨벤션센터) |
| 권호 | 16권 1호 |
| 발표분야 | 정보.전자소재 |
| 제목 | Characterization of microwave annealed indium zinc oxide thin film transistor |
| 초록 | In this study, a new annealing method using microwave is introduced to form indium zinc oxide (IZO) semiconductor thin film transistors (TFTs). To enhance the annealing effect, precursor solution for IZO was prepared in aqueous phase. The active layer could be fabricated both by spin-coating and inkjet printing on common gate structure of the TFTs. Chemical analysis of the IZO layer and device characterization of the TFTs are discussed. |
| 저자 | 김예진, 정헌상, 김민근, 이현호 |
| 소속 | 명지대 |
| 키워드 | TFT; IZO; microwave |
