| 초록 |
For next generation semiconductor devices, nanoparticle have been spotlighted as charging elements of memory device. In this study, Si nanoprticles(NPs) were prepared by a simple chemical oxidation and etching method with silicon powder. For enhanced stability of the Si NPs, 1-dodecene was adopted as a capping molecule, which help avoid an oxidation and alter surface of Si NPs hydrophobic. The formation of Si NPs and the 1-dodecene capping on the Si NPs were characteried by UV-VIS spectra and Fourier transform infrared spectroscopy(FT-IR). |
