| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Solution-Processed Titanium Dioxide Dielectric Films for Low-Voltage Organic Thin-Film Transistors |
| 초록 |
Although titanium dioxide (TiO2) has a high permittivity promising for the purpose of gate dielectric, it has been only few scientific reports on thin-film transistors (TFTs) based on TiO2. The reason why there is a trade-off between the mechanical and electrical properties related to the thermal annealing process. Thus, it has to be realized for optimal dielectric performance. Herein, we optimized the thermal annealing temperature of sol-gel based TiO2 thin-film for high-performance gate dielectric application through judicious control with extensive thermal, chemical, and microstructure analyses. The moderately high thermal annealing exhibits smooth and dense amorphous TiO2 film formation with low leakage current density (＜ 10-7 A cm-2) even below 30 nm film thickness. Finally, our TiO2 film as a gate dielectric formed by optimal thermal annealing condition was demonstrated the low-voltage pentacene-based organic TFTs enabled the stable operation at sub 1 V. |
| 저자 |
성수진, 박성준, 이원준, 손종호, 김창현, 윤명한
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| 소속 |
광주과학기술원 |
| 키워드 |
titanium dioxide; sol-gel; gate dielectric; organic thin-film transistor
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| E-Mail |
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