| 초록 |
The low pressure chemical vapor deposition (LPCVD) of un-doped and B-doped ZnO (ZnO:B) thin films was investigated for transparent front contact of CIGS solar cells. DEZ(diethyl zinc) and H2O were used as Zn and O source, respectively, and B2H6 was used as a doping gas. The un-doped and B-doped ZnO thin films exhibited a marked preferred orientation along the (112 ̅0) crystallographic plane. And the well textured surface morphology with pyramid shape grains was confirmed by SEM and AFM analysis. The resistivity of LP-CVD ZnO:B thin films was decreased with B doping, showing the minimum resistivity of 1x10-3 Ωcm. The un-doped ZnO and B-doped ZnO thin films exhibited high average transmittance over 80 % in the visible range. Pyramidal shape surface morphology was obtained at proper growth conditions, resulting in the increase of the diffuse transmittance. The optimization of electrical and optical properties of LP-CVD ZnO:B as a transparent front contact for CIGS thin film solar cells has been carried out. |
