| 초록 |
High-performance OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes, which needs to do photolithography process. Gate dielectrics are required good insulating properties, reducing contact resistance at interfaces between organic semiconductors and gate dielectrics, low processing temperature and excellent chemical resistance. We synthsized fully aromatic polyimide gate dielectrics with excellent chemical resistance for photo-lithographic processes. To compare the chemical resistance of the polyimide with that poly(vinyl phenol), both films were treated with PR stripper and ITO etchant solution and then change of morphologies and thickness had been investigated. The PVP film was damaged after the treatment of the chemicals, on the other hands, the PI film showed excellent chemical resistance. As a results we could fabricate the pentacene OTFTs with considerably good performance after the treatment of processing chemicals. |
