| 초록 |
Flexible transparent thin-film transistors (TTFTs) have emerged as next-generation transistors because of their applicability in transparent electronics. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing electronics. Because patterning that prevents crosstalk noise is essential, in fabricating TTFTs, the need for patterning methods is critical. When patterning solution-processed ZnO thin films, several points require careful consideration. As these thin films have a porous structure, conventional patterning based on photolithography causes loss of film performance. In addition, as controlling the drying process is cumbersome, it is difficult to fabricate ZnO semiconductor films with robust fidelity through selective patterning. Therefore, we have developed simple selective patterning method using a substrate pre-patterned through bond breakage of PMMA, as well as new development using a toluene-methanol mixture. |
