| 학회 |
한국고분자학회 |
| 학술대회 |
2012년 봄 (04/12 ~ 04/13, 대전컨벤션센터) |
| 권호 |
37권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Bimolecular doping induced band-gap opening of bilayer graphene |
| 초록 |
The absence of band gap in pristine graphene is detrimental to the device function as post-silicon electronic devices. Bilayer graphene serves a unique alternative for bandgap engineering by creating perpendicular electric field for breaking inversion symmetry of graphene. Here, we used controllable molecular doping on both sides of bilayer graphene to induce the doping-driven perpendicular electric field. The FET device shows gradual increment of minimum conductivity according to the doping level, giving comparably high on/off ratio at the room temperature. The enhancement of device performance is attributed to the bandgap opening by inversion symmetry breaking, as well as the formation of disorder induced electron-hole puddles from inhomogeneous doping of charged impurities. The facile control of doping level and resultant performance enhancement will contribute significantly to the development of graphene based next generation electronics devices. |
| 저자 |
조새벽, 김현호, 강보석, 이성규, 이효찬, 봉효진, 조길원
|
| 소속 |
포항공과대 |
| 키워드 |
Graphene; SAM; Molecular Doping
|
| E-Mail |
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