| 학회 |
한국고분자학회 |
| 학술대회 |
2009년 가을 (10/08 ~ 10/09, 광주과학기술원 오룡관) |
| 권호 |
34권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Solution-processed high k inorganic/polyimide gate dielectric for low-voltage pentacene thin-film transistor |
| 초록 |
One of the important goals for gate dielectric development is reduced organic thin-film transistor (OTFT) operating voltages, leading to decreased device power consumption. In this study, we report low-voltage operated pentacene organic thin-film transistor using solution processed inorganic high k/ polyimide (PI) bilayer gate dielectrics. Bulk property of hybrid dielectric was determined by solution-processed inorganic high k layer and interface property of dielectric layer was controlled polyimide-based organic layer. We have tried to modify the top dielectric surface state from rough hydrophilic inorganic to smooth hydrophobic organic for high crystallinity of active pentacene layer. The surface uniformity of bilayer dielectric and crystallinity of active layer on bilayer dielectric verified by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. Detailed electrical properties of dielectric layer and TFT will be discussed. |
| 저자 |
김지영, 안택, 이미혜, 최성호, 박병윤, 정하균
|
| 소속 |
한국화학(연) |
| 키워드 |
bilayer; dielectric; OTFT
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| E-Mail |
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