| 초록 |
According to ITRS roadmap, interlayer dielectric materials for non-memory devices are required to have much lower dielectric constant than conventional dielectric film. Nanoporous dielectrics, obtained by using the porogen system, have emerged as promising candidates for reducing dielectric constant. However, it is hard to maintain their mechanical properties at high porosities. Therefore, in order to improve mechanical properties ultra-violet radiation curing system was employed. UV irradiation had influence on the dielectric structures by decreasing the portion of cage structures and increasing network structures. The structural rearrangements led to significantly higher mechanical properties. In this study, films with different porosities were prepared and the effects of UV treatment on nanoporous ultralow dielectrics were investigated. |
