| 학회 |
한국화학공학회 |
| 학술대회 |
2013년 봄 (04/24 ~ 04/26, 광주 김대중컨벤션센터) |
| 권호 |
19권 1호, p.265 |
| 발표분야 |
미립자공학 |
| 제목 |
Titanium Oxide Thin Films Prepared by Plasma Chemical Vapor Deposition for Different TTIP Concentrations |
| 초록 |
Titanium oxide films have been prepared from titanium tetra-isopropoxide (TTIP) precursor by using plasma chemical vapor deposition (PCVD) system. The films were deposited onto silicon substrates under a constant operating pressure of nitrogen gas. The composition and the structures of the thin films have been investigated by SEM. We observed the TiO2 thin film with smooth morphology at low initial TTIP concentration, granular morphology at medium initial TTIP concentration, and columnar morphology at high initial TTIP concentration. It is proposed that we can prepare the TiO2 thin film with controlled morphologies in one-step process by just adjusting the initial precursor concentration in PCVD. |
| 저자 |
Nguyen Hoang Hai1, 김교선1, 최희규2
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| 소속 |
1강원대, 2창원대 |
| 키워드 |
Morphology of TiO2 thin film; Particles; Thin films; Plasma chemical vapor deposition
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| E-Mail |
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| 원문파일 |
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