| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Highly reliable and low-energy operation by “Erase-free” based multi-bit performance in a HfO2 resistive switching device |
| 초록 |
Fully ‘Erase-free’ multi-bit operation (3-bit in this research, 7-low resistance state (LRS) and 1-high resistance state (HRS)) is demonstrated in the W/HfO2/TiN stacked resistive switching device. The term Erase-free means that a digital state in a multi-bit operation can be achieved without initializing the device resistance state when the device moves to another digital state. Because of the ‘direct’ movement between different resistance states, the ‘Erase-free’ based multi-bit operation can save the operational energy compared to the ‘Non Erase-free’ case. For stable and reliable ‘Erase-free’ operation, several prerequisites are required, such as gradual resistance change with applied electric pulse stimuli in both writing and erasing processes, electrical-circuit-controlling algorithm and high reliability of resistive switching device itself, are required. Experimentally, up to 75% of operational energy saving and near the state-overlap probability of 6σ are confirmed simultaneously in ‘Erase-free’ operation compared to the ‘Non Erase-free’ case. These results of this research can be a positive step to realize the next-generation non-volatile memory applications. |
| 저자 |
Jin joo Ryu1, Chunjoong Kim2, Gun Hwan Kim3
|
| 소속 |
1Division of Advanced Materials, 2Korea Research Institute of Chemical Technology (KRICT), 3Republic of Korea/ Department of Materials Science and Engineering |
| 키워드 |
resistive switching; multi-bit operation; erase-free; W electrode; energy-efficient
|
| E-Mail |
|
