| 초록 |
Nanogap structures are fundamental building block for the fabrication of nanometer-sized devices. Amongst all the approaches, one of the most reliable and controllable is lithography techniques such as e-beam lithography and dip-pen nanolithography. However previous studies have been big problems because of the difficulty in patterning of sub-30-nm gap structures with low costs and large areas, even although they are direct writing methods with no masks. Here we demonstrate the fabrication of sub-30-nm gap structures through metal-embedded-stamp in conjunction with secondary sputtering lithography. And we achieved the possibility of the direct pattering technique with precise control of gap’s size, shape and height. Plasmon activities of our nanogap patterned structures are expected to be promising applications for surface-enhanced raman scattering. |
