| 초록 |
Control of ferroelectric polymer thin films attracts much interest due to a number of applications such as organic nonvolatile memory. Poly vinylidene fluroride (PVDF) and its copolymers with trifluoroethylene (TrFE), one of representative ferroelectric polymers, were used to fabricate metal-insulator-metal device. We formed organic buffer layer of SAMs between polymer thin films and bottom metal electrodes. The control of metal/polymer interface gave rise to the change of crystallinity and crystal orientation in thin films. The effect of modification of various alkanethiolate and alkylsiloxane SAMs was investigated on the evolution of ferroelectric crystalline structure. The relationship between ferroelectric properties and different chain orientations in thin P(VDF-TrFE) films with respect to the surface modification was revealed by grazing x-ray diffraction and atomic force microscopy, displacement-electric field hysteresis loop and capacitance-voltage measurement. |
