| 초록 |
We attained the synaptic characteristics of resistive switching (RS) random access memory (ReRAM) using ZnO nanorods (NRs). Spin-coating process including hydrolysis and condensation was adopted to do process ZnO NRs between two electrodes, Ti and Pt, for top and bottom electrodes, respectively. From metal-insulator-metal (MIM) structure, bipolar RS behavior was observed after forming step. To evaluate the potential synaptic device application, potentiation and depression under various AC pulse measurement conditions were verified. Unlike sharp digital switching behavior, ReRAM with ZnO NRs shows gradual RS change, which is good for synaptic characteristics. Our results demonstrate that ZnO NRs as a switching medium can be used for synaptic switching material becasue voids with respect to NR size can affect RS significantly. Controlling NR size might be one way to contro analouge RS characteristics, which are required for synaptic device applications. |
