| 초록 |
Our unique strategy involves electrochemically depositing the Cu2O thin films with different crystal orientations by understanding the role of metal dopants. Tactically, we propose a groundbreaking idea of depositing novel Cu2O thin films via the simultaneous injection of two metal dopants promoting different crystal orientations. Our designed Cu2O thin films are composed of uniformly distributed NPs with extremely high crystal density in the amorphous-like matrix, instead of with a typically faceted crystal morphology. As a next step, we apply these Cu2O films to ReRAM devices requiring high electrical performance and stability, in a first attempt for the memory device application of the electrochemically prepared NPs-embedded Cu2O films. In this research, we demonstrate that the Sb and Pb metal impurities promote the favorable growth of the (111) and (200) plane orientations, respectively, of the Cu2O thin films together with high crystallinity and electric properties, where all deposition conditions are the same except for the type of metal impurities. We systematically understand the electrodeposition evolution of the doped Cu2O films and how to control conveniently the growth direction via the help of metal impurities in the electrodeposition process. Subsequently, the simultaneous inclusion of Sb and Pb metal ions freely results in the designed NPs embedded Cu2O films, revealing the spatial distribution of dramatically high-density and uniform NPs. Consequently, the NPs-based Cu2O films produced by adding two functional metal impurities have considerably low electrical conductivity, and show a quite large set/reset current ratio (~1.2 × 104) as well as excellent characteristics in terms of stability, reliability, repeatability, and uniformity for the ReRAM applications. |
