| 초록 |
Here, we used allyltrimethylsilane (ATMS) consisting in an allyl group along with three methyl groups attached to silicon for SiCOH matrix, in order to prepare the low dielectric constant (low-k) and high modulus films by plasma-enhanced chemical vapor deposition (PECVD). We found that the dielectric constant and mechanical properties of the low-k material are strongly affected by the selection of precursor, the processing conditions such as a deposition temperature and post-treatment, and the introduction of a second labile phase, its chemical structure and composition. After porogen (pore generator) treatment with cyclohexene oxide (CHO), the resulting material exhibits low dielectric constant with excellent mechanical and thermal properties, having k~2.4 and 8.4 GPa of Young’s modulus. FT-IR and XPS results show that this is attributed to the desorption of labile phase (CxHy), formation of cage-like structure and change of chemical composition in the films after thermal treatment. |
