| 초록 |
Graphene, a 2-dimensional carbon nanostructure, has unique electrical and optical properties. There is currently interest in taking advantage of these properties for electronic applications. In this talk, I will explore graphene for high-efficient electronic and sensor applications. I first demonstrate the field-effect transistor (FET) characteristics and photoelectric properties of graphene nanoribbon (GNR) arrays having 9–12 nm ribbon widths which were fabricated using a cylindrical PS-b-PDMS block copolymer (BCP) as a lithographic mask to pattern graphene monolayer sheets grown by chemical vapor deposition (CVD) and transferred onto heavily p-doped Si substrates coated with a 300 nm-thick SiO2 layer. GNR array FETs exhibited higher on/off ratio and photocurrent when compared to pristine graphene FETs. The reactivity of CVD graphene supported on different substrates and reactivity imprint lithography for graphene are also discussed. |
