| 초록 |
The self-assembly of Si-containing block copolymers (BCPs) and plasma oxidation can produce tailored SiOx nanostructures with tunable geometry, size, and density. First, this talk will report the direct formation of ordered resistive memory nanostructures on metal and graphene electrodes by the self-assembly of Si-containing BCPs. We found that both SiOx memristors of thin films and nanodots present unipolar switching behaviors with extremely low switching current levels. Second, this talk will present a novel approach that can relieve the power consumption issue of phase-change memories by incorporating a thin, nanostructured SiOx layer formed by BCP self-assembly, which locally blocks the contact between a heater electrode and a phase-change material, effectively reducing the phase-change volume. The writing current decreases by 5 times (corresponding to a power reduction of 1/20) as the occupying area fraction of SiOx nanostructures varies. |
