| 학회 |
한국공업화학회 |
| 학술대회 |
2020년 가을 (10/28 ~ 10/30, 광주 김대중컨벤션센터(Kimdaejung Convention Center)) |
| 권호 |
24권 1호 |
| 발표분야 |
포스터-디스플레이 |
| 제목 |
Efficient hole injection mechanism with gap state of vanadium pentoxide for quantum-dot light-emitting diodes |
| 초록 |
We demonstrate the efficient hole injection mechanism with gap state using vanadium oxide (V2O5) hole injection layer (HIL) for high-performance and inorganic quantum dots (QDs) light emitting diode (QLED). Effective hole injection characteristics were observed at the hole only device (HOD). Moreover, we investigated that the density of gap states was increased according to reduce the annealing temperature. Therefore, QLEDs with a low-temperature processable V2O5 HIL was fabricated, and the device showed remarkable performances. The maximum luminance based on ITO electrode and IWO electrode device were measured as 56,717 cd/m2 and 9,443.5 cd/m2, respectively. The result demonstrates that the inorganic V2O5 HIL is a promising alternative to organic HILs for state-of-the-art QLEDs. |
| 저자 |
허수빈1, 유종훈1, 김민주2, 이연진2, 강성준1
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| 소속 |
1경희대, 2연세대 |
| 키워드 |
vanadium oxide; inorganic hole injection layer; QLED; quantum dot; interfacial electronic structure
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| E-Mail |
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