| 초록 |
Doping was used in organic molecules to increase conductivity for high efficiency organic optoelectronics. Generally the conductivity of doped organic molecules increased more than that of intrinsic organic molecules as the doping concentration, but the mobility of doped organic molecules decreased at high doping concentration. In this work we analyzed the effect of electric field, temperature and doping concentration on the hole mobility of p-type dopant doped organic molecules. We fabricated molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] [Mo(tfd)3] doped 1,4-bis[N-(1-naphthyl)-N’-phenylamino]-4,4’ diamine (NPB) with varying doping concentration from 0.5 mol% to 20 mol% and measured hole mobility by dark injection space charge limited current (DI-SCLC) and time of flight (TOF). We characterized the hole mobility in doped film using energetic disorder parameter (σ) and positional disorder parameter (Σ) in Gaussian Disorder Model (GDM). |
