| 학회 | 한국재료학회 |
| 학술대회 | 2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 | 19권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | The Electrical Properties of (LaVO3)2/(La0.75Sr0.25VO3)n Superlattices Grown on Stepped LaAlO3(100) Substrate |
| 초록 | The electrical properties of (LaVO3)m/(La0.75Sr0.25VO3)n superlattices (LVO/LSVO) were investigated. The LVO/LSVO superlattices were grown on stepped LaAlO3 (100) substrate using laser molecular beam epitaxy (Laser-MBE) with the following stacking sequences : m/n = 2/2, 2/4, 2/6, 2/8 and 2/10. The reflection high energy electron diffraction (RHEED) oscillation and atomic force microscopy (AFM) image show that the superlattices have been grown in the two dimensional layer-by-layer growth. The electrical properties were investigated by 4-points probe method in the temperature range of 80K ~ 400K. We already reported metal-insulator transition in ultrathin La0.75Sr0.25VO3 films with varying thickness. The metal-insulator transition was observed at acritical thickness around 5u.c. as the thickness was reduced from 25u.c.. The ultra thin films under 5u.c. thickness exhibited insulator characteristic while bulk LSVO show correlated metallic characteristics. In this study, LVO (Mott-insulator) layers with 2u.c. thick were sandwiched between LSVO layers while the thickness of LSVO layer was varied in the stacking sequence mentioned above. Contrary to the ultrathin LSVO films, the LVO/LSVO superlattices showed a metallic behavior for the stacking sequences used in this study. The different behavior of electrical characteristics between ultrathin LSVO films and LVO/LSVO superlattices will be discussed. |
| 저자 | Taejun Hwang1, Tran M. Dao2, Partha S. Mondal1, Jaichan Lee2 |
| 소속 | 1School of Advanced Materials Science & Engineering, 2Sung Kyun Kwan Univ. |
| 키워드 | superlattice; lanthanum strontium vanadate |
