| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characteristics of Molybdenum Disulfide (MoS2) formed by Hydrogen Sulfide (H2S) Sulfurization |
| 초록 | Among 2D-materials, unlike graphene, transition metal dichalcogenides (TMDs) have emerged to be adopted for various electronic and optoelectronic devices due to its variability of energy bandgap (Eg) on the number of 2D layers. In this study, we demonstrated the facile synthesis of 2D MoS2 layer on the SiO2/Si substrate using a direct chemical reaction between Mo precursor and hydrogen sulfide (H2S)/nitrogen mixture gas. The synthesized MoS2 films show two types of growth modes - isolated and continuous types-. Widespread tiny particles, agglomerate cluster and unique circular shape are shown within the isolated MoS2 film while the continuous MoS2 has number of layers on Eg dependence. It ranges 1.81 to 1.86 eV depending on the layer thickness, which was confirmed by AFM and Raman analysis. The lower Eg is attained as the film is thicker. By adjusting Mo thickness (1, 3, 5 nm) and H2S (5%)/N2 mixture flow rate (250, 500 sccm), we could modulate the number of layer of MoS2 film as well as tune the Eg values. [Acknowledgement] This study was supported by the Industrial Technology Innovation Program (10054882, Development of dry cleaning technology for nanoscale patterns) funded by the Ministry of Trade, Industry and Energy (MOTIE, Republic of Korea) |
| 저자 | 최문석, 임동환, Andray Sergeevich, 손석기, 한훈희, 김영진, 이재호, 최창환 |
| 소속 | 한양대 |
| 키워드 | MoS<SUB>2</SUB>; H<SUB>2</SUB>S Sulfurization; TMD; 2D Materials |
