| 초록 |
ZrxSi1-xO2 films were deposited by MOCVD using Zr(N(C2H5)2)4 and Si(OC4H9)4. Composition (x) of a 4 nm thick ZrxSi1-xO2 was investigated by Zr 3d, Si 2p, and O 1s XPS depth profiles. The Zr/(Zr+Si) ratio gradationally changed from ~0.1 at the silicate film surface to ~0.67 at the ZrxSi1-xO2-Si interface during Ar+ sputtering. These results were analyzed by binding energy shifts, which are consistent with the predictions of model calculations based on the relative atomic electronativities. An atomically flat interface with no sub-SiO2 interfacial layers was observed. Carbon contamination was less than 0.1 atomic % (below detection limits). The dielectric constants were approximately 9 for both Zr-silicate films as-deposited and annealed at 500 °C in oxygen ambient. When annealed in oxygen ambient, the flat band approached the ideal value in C-V curve. The leakage current density of the Zr-silicate films as-deposited and annealed at 500 °C was ~5×10-4 A/cm2 and ~3×10-8 A/cm2, respectively, at a bias of 1.0 V. |
