| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | 세라믹스 |
| 제목 | 전자빔 증발법으로 제조한 Al2O3 박막의 열처리에 의한 특성 평가 |
| 초록 | Alumina (Al2O3) has so many attractive properties such as high chemical and thermal stability, low electrical conductivity maintained to high temperature, a small number of pinholes, very low permeability of alkali ions and other impurities, and high dielectric constant. The Al2O3 thin films in various forms are used in semiconductor devices as protective coatings and insulating layers, as wear resistant coatings, and as humidity sensors. For these applications, much effort has been made to obtain high quality thin Al2O3 layers. In addition, alumina film has to withstand the thermal budget of subsequent process steps. Hence, a clear understanding of the effect of thermal treatment on microstructure and electrical properties is very important. In this study, Al2O3 thin films were deposited on Si(100) substrates at room temperature by e-beam evaporation using sintered alumina pieces as a source, and the as-deposited Al2O3 thin films were annealed at 900 oC-1300 oC in an air atmosphere. The effects of thermal treatment on the microstructure and C-V properties the Al2O3 films were investigated. The crystallinity and microstructure of the films were analyzed by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM), respectively. Both the as-deposited and thermal treated Al2O3 thin films show dominantly amorphous crystal structure. But the grain growth occurs very rapidly for the films annealed at 1200 oC and 1300 oC. Moreover, the films thermal treated above 1200 oC cannot be observed a sharp interface with substrate due to reaction with Si(100) substrate, while the films annealed below 1100 oC show no visible reaction with Si(100) substrate. It is also found that the leakage current of the films is closely related to the microstructure of the films after thermal treatment. This study was supported by a Korea research foundation grant (KRF-2002-005-D00012). |
| 저자 | Hyun-Wook Ryu1, Jin-Seong Park2 |
| 소속 | 1RIERT, 2Chosun Univ. |
| 키워드 | Al2O3 Thin film; E-beam evaporation; C-V propeties |
