| 학회 | 한국화학공학회 |
| 학술대회 | 2005년 봄 (04/22 ~ 04/23, 여수대학교) |
| 권호 | 11권 1호, p.933 |
| 발표분야 | 재료 |
| 제목 | Interfacial properties of ultra thin HfxSi1-xO2 films grown by ALCVD using Hf(N(C2H5)2)4 and Si(OC4H9)4 for CMOS application |
| 초록 | Ultra-thin HfxSi1-xO2, grown on Si surfaces by atomic layer chemical vapor deposition (ALCVD), were characterized in terms of their interface properties using x-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron spectroscopy (HRTEM). The formation of Hf-silicide at HfxSi1-xO2/Si interfaces was induced by the reaction of metallic Hf atoms with Si substrate atoms. The capacitance and leakage current density of Au/Hf-silicate/Si structures were analyzed before and after N2 rapid thermal annealing (RTA). This work was supported by a grant No.(R01-2002-000-00279-0(2002)) from Korea Science & Engineering Foundation. |
| 저자 | 김재현, 용기중 |
| 소속 | 포항공과대 |
| 키워드 | gate oxide; ALCVD; silicate |
| 원문파일 | 초록 보기 |
