| 초록 |
Recently, polymeric materials have interested as a gate dielectrics of OTFTs, because of its flexibility and processability. In this study, organic-inorganic composite materials of polyvinylphenol (PVP) and titanium dioxide (TiO2) was adopted as a gate dielectric. Dielectric constants of these composite materials could be modified according to the content of TiO2 particles and effects of composite insulator on the performance of OTFTs were investigated. It was investigated the characteristic improvements due to the increase in the dielectric constant of the PVP-based insulator by compositing with high-k particles. It is one of critical issues to prevent the aggregation of TiO2 particles during the synthesis process, because a lump of TiO2 in the composite film often causes a large gate-leakage current. In this point of view, the dielectric properties and the device performance as the dispersity of inorganic particles in the composites were investigated. |
