| 초록 |
As the semiconductors are miniaturized, requirements for reducing RC delay of microelectronics have gained much interest in recent years. Reducing the dielectric constant of insulator is the key factor in this field and porous structure polyimide-graphene oxide composite films were prepared in this work by non-solvent induced phase separation(NIPS) process. Porous films tend to be weak to thermal and mechanical properties, and grafting of 4,4'-oxydianiline(ODA) onto graphene oxide were performed to ensure the strong interfacial interaction with polyimide. With small addition of 0.2wt% ODA-GO, thermal and mechanical properties were increased and the dielectric constants gradually decreased from 3 to ≈1.3 and ≈1.4. |
