| 학회 |
한국재료학회 |
| 학술대회 |
2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 |
12권 2호 |
| 발표분야 |
반도체 재료 |
| 제목 |
Origin of Void Formation in a Porous Anodic Alumina Template on Si wafer |
| 초록 |
Preparation of a porous anodic alumina (PAA) template, directly formed on Si wafer, enables high density, size-controlled nanowire arrays which are then vertically integrated over wafer-scale areas to fabricate nanodevices, such as field-effect-transistors and sensors. The presence of interfacial voids between the alumina film and Si substrate, however, complicates the organization of reliable contacts between the nanopores (or nanowires) and substrate (or bottom electrodes). We describe a complete process of void formation according to the inversion behavior of the barrier layers. We also clarified that the alumina transformation of the Al metal remaining when the barrier layer of nanopores touched the substrate purposely nucleated the interfacial voids so as to accommodate the stresses of volume expansion without devastating the pore arrays. |
| 저자 |
Hong-Seok Seo1, Yang-Gyoo Jung2, Sang-Won Jee1, Han-Don Um2, Jung-Ho Lee1
|
| 소속 |
1Dept. of Fine Chemical Engineering, 2Hanyang Univ. |
| 키워드 |
Porous anodic alumina; Void; Volume expansion; Additional space; Inverted barrier layer; Si wafer
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| E-Mail |
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