| 학회 | 한국재료학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 광주 김대중컨벤션센터) |
| 권호 | 27권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | 용액법 기반 비희소금속 산화물 반도체 박막의 저온 결정화 기술 개발 |
| 초록 | For past decades, innovative solution approaches and low-temperature processes have been successfully developed for high-performance metal oxide (MO) semiconductors and their optoelectronic applications. Although those strategies could effectively lower the activation and chemical transition temperature to achieve high-quality a-MO films from precursor solution, those a-MO semiconductor based optoelectronics steadily reveal problematic issues originating from the amorphous phase; i) limited electrical performance due to inefficient conduction paths, ii) amorphous defect-state induced operation instability, and iii) limited materials candidates (earth-rare metal based (In- and Ga-based) MO semiconductors). In contrast, the c-MO semiconductors are advantageous to demonstrate high-performance and high-stability optoelectronics owing to more effective conduction paths and suppressed defect states. Then, we report new catalytic metals-induced low-temperature crystallization process technique introducing a crystalline catalytic metal seed layer for low-temperature crystallization of solution-processed a-MO semiconducting films. The newly developed CMAC process could effectively suppress crystallization temperature (≥ 300 ⁰C) of solution-processed a-MO films, enabling scalable manufacturing of high-quality semiconducting c-TiO2 film with well-aligned anatase grains and low-defect density. In particular, Al-CMAC process using crystalline thin-aluminum (Al) catalytic metal seed layer simultaneously facilitates low-temperature crystallization (≥ 300 ⁰C) of solution-processed a-TiO2 films and the implementation of c-TiO2 TFTs with superior field-effect mobility, good on/off switching behavior and improved operational stability. |
| 저자 | 주은총1, 박제형2, 고경민3, 조성운2 |
| 소속 | 1첨단부품소재공학과, 2순천대, 3전기전자공학과 |
| 키워드 | 산화물 박막트랜지스터; 디스플레이; 저온결정화; 용액법 |
