| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Effect of cross-linkable random copolymer layer in ferroelectric field effect transistor(FeFET) wiith poly(inylidene fluoride-co-trifluoroethylene) as gate dielectric. |
| 초록 |
Poly vinylidene fluoride-co-trifluoroethylene(PVDF-TrFE) has been well known as ferroelectric material for organic nonvolatile memory applications. Among ferroelectric memory devices, ferroelectric field effect transistors(FeFET) have been of great attention because of nondestructive readout and large scale integration. Since, PVDF-TrFE used as gate dielectric in FeFET has high coercive voltage, it is essential to reduce the thickness of PVDF-TrFE layer. However, reducing film thickness induces high gate leakage resulting in high off current state in FeFET. Here, we demonstrate a pentacene based-FeFET with insulating layer to reduce off current. Thin layer of cross-linked poly(styrene-r-benzocyclobutene-r-methylmethacrylate), thermally and chemically stable and compatible with PVDF-TrFE, was employed as insulating layer. At the certain critical thickness of insulating layer, it was observed that both gate leakage current and off current were significantly reduced in I-V characteristic. |
| 저자 |
장지연, 신창학, 박연정, 정희준, 강석주, 조필성, 박철민, 류두열
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| 소속 |
연세대 |
| 키워드 |
PVDF-TrFE; FeFET; insulating layer
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| E-Mail |
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