| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
전자재료 |
| 제목 |
Self-Limiting Atomic Layer Deposition of Transition Metal Oxides Combined with Oxidation Process |
| 초록 |
High diffusivity of nickel into Si matrix leads to incapability of controlling Ni amounts required of amorphous Si thin films. The high Ni content encounters undesired effect on transistor characteristics, i.e., high leakage current, low on/off ratios, etc. The additional oxide can function as a barrier against mobile Ni atoms. The amorphous state of Si places itself into highly unstable states. The high energy state of Ni can allow the facilitated formation of oxide layers, i.e., silicon oxides, SiOx. The artificial SiOx layer will be combined with self-limiting atomic layer deposition, minimizing the interstitial diffusion of Ni into Si. The Si crystallization will be processed focusing on the function of oxidation layers. The optimized microstructure will be discussed in conjunction with the operating mechanism in atomic layer deposition and thermodynamics. |
| 저자 |
Ho Sun Jun1, Tae Hoon Sung1, Young Woo Yoon1, Min Seok Shim1, J.Y. Lee2, J. H. Hwang3
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| 소속 |
1Korea Science Academy, 2Dept. of Materials Science & Engineering, 3Hongik Univ. |
| 키워드 |
Si; crystallization; ALD
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| E-Mail |
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