| 초록 |
In this study, we introduced a low-k (2.45) and high Tg (~ 180oC) polymer gate dielectric for the fabrication of high performance organic complementary inverters composed of pentacene and PTCDI-C13 FETs. Since the polymer has very high Tg (meaning that there exists very small free-volume inside the polymer), it showed excellent insulating properties (a leakage current density of 10-7 A/cm2 at 2.0 MV/cm). Moreover, due to the high thermal stability of the dielectric polymer, PTCDI-C13 formed highly crystalline structure onto the dielectric after thermal annealing at 120oC, while it showed less crystallinity onto other conventional polymer dielectrics which have Tg values under 120 oC. Finally, from the low trap density originated with the highly hydrophobic property (water contact angle of 95o) of the polymer dielectric, the pentacene and annealed PTCDI-C13 FETs showed high field effect mobility and their complementary inverters showed excellent electrical performance. |
