| 학회 |
한국재료학회 |
| 학술대회 |
2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 |
15권 2호 |
| 발표분야 |
G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 |
Hysteresis-free organic field-effect transistors with a high dielectric strength cross-linked polyacrylate copolymer gate insulator |
| 초록 |
Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate (PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (＞7 MV/cm), low leakage current density (5×10-9 A/cm2 at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ~0.6 cm2/V s, on/off current ratio (Ion/Ioff) of ~105 and inverse subthreshold slope (SS) as low as 1.22 V/dec were achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance. |
| 저자 |
Wentao Xu1, Sanghoon Lim2, Shi-Woo Rhee3
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| 소속 |
1System on Chip Chemical Process Research Center, 2Department of Chemical Engineering, 3Pohang Univ. of Science and Technology (POSTECH) |
| 키워드 |
organic field-effect transistor; polyacrylate; gate insulator; hysteresis; dielectric strength; low-voltage operation
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| E-Mail |
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