화학공학소재연구정보센터
학회 한국고분자학회
학술대회 2010년 가을 (10/07 ~ 10/08, 대구 EXCO)
권호 35권 2호
발표분야 기능성 고분자
제목 High Performance Organic FeFET via P3HT Micro Contacting Combined with Ag Transfer
초록 Organic electric devices have recently been of great interest. Non-volatile ferroelectric memory device using poly(vinylidene fluoride Trifluoroethylene) (P(VDF-TrFE)) is one of representative organic memory devices. We used soluble organic semiconductor, P3HT, which has great benefits of its solution process and large area fabrication, for high-performance P(VDF-TrFE) ferroelectric memory devices. For the reliable FeFETs based on the organic materials, device fabrication via facile patterning is one of the most feasible processes. We have investigated vacuum-free FeFET based on P3HT micro contact printing combined with Ag transfer method, systematically changing surface energy of P3HT layer using thermal annealing. The influence of pattered P3HT active layer on FeFET performance gave rise to not only high hysteresis on/off ratio ~104, but also significantly reduced gate leakage current under ~10-11.
저자 김한기, 배인성, 강석주, 박철민
소속 연세대
키워드 ferroelectric; memory; p3ht; pattern
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