| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | A. Information and Sensor Materials(정보소재 및 센서) |
| 제목 | The Characterization of N-channel Metal-Oxide-Semiconductor Field-Effect-Transistor (nMOSFET) with Sputtered SrTiO3-Doped HfO2 Gate Dielectrics |
| 초록 | In order to keep increasing performance and lowering power dissipation of aggressively scaled next generation devices, a successful solution with higher dielectric constant (higher-k) gate dielectric and metal gate are in great demand. To boost dielectric constant, either increasing polarizibility(αm) or reducing molar volume (Vm) of dielectrics based on “clausius-Mosotti” equation is needed. SrTiO3 gate dielectric has been investigated as an alternative gate dielectric for both memory and logic applications due to its high dielectric constant. However, it shows trade-off between high dielectric constant and small conduction band-offset (0.1eV) and bandgap (3.5eV), leading to huge leakage current and reliability issue. In this study, n-channel metal-oxide-semiconductor field-effect-transistor (nMOSFET) with sputtered SrTiO3-doped HfO2 gate dielectric has been demonstrated using conventional gate first (GF) process. HfO2 is introduced as a buffer layer to alleviate low band-offset/gap of SrTiO3. Enhanced electrical propreties are achieved. Increasing SrTiO3 thickness in SrTiO3/HfO2 gate dielectrics increases capacitance and becomes more nFET-compatible characteristics (i.e., negative flat-band voltage(VFB) and threshold voltage(Vth) shift). However, it is found that mobility become degraded compared to control HfO2 only, attributed to Sr diffusion into Si channel region. By optimization, 1.24nm thick-inversion thickness (Tinv) and 147 cm2/V.s@1MV mobility attained. |
| 저자 | 최창환 |
| 소속 | 한양대 |
| 키워드 | High-K Gate Dielectric; nMOSFET; Tinv Scaling; SrTiO3 |
