| 학회 |
한국재료학회 |
| 학술대회 |
2007년 가을 (11/02 ~ 11/02, 성균관대학교) |
| 권호 |
13권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Influence on structural and optical properties of Ga doped ZnO and ZnO films by thermal annealing |
| 초록 |
ZnO is one of the promising materials for the electronic and optoelectronic devices. We have investigated the effect of annealing on the structural and optical properties of polycrystalline ZnO and Ga doped ZnO (GZO) films grown on glass substrates by RF-magnetron sputter at room temperature. The structural and optical properties of as-grown two types of films were characterized and then samples were annealed at 500℃ in N2 ambient for 60 minutes, respectively. The field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) were used to measure the grain size and the crystalline quality of these films. We found that the crystalline quality was improved and the grain size tends to be enhanced. The Optical properties of these films were analyzed by UV-VIS-NIR spectrophotometers. It is found that optical properties of GZO films are more increasing than ZnO films by annealing and can be used for transparent electrode application. We believe that the appropriate post-growth heat treatment could be contributed to the improvement of GZO-based devices. |
| 저자 |
이지수1, 전훈하2, 김도현3, 전민현1
|
| 소속 |
1Department of Nano Systems Engineering, 2Center for Nano Manufacturing, 3Inje Univ. |
| 키워드 |
ZnO; GZO; annealing
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| E-Mail |
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