학회 |
한국고분자학회 |
학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
권호 |
31권 1호 |
발표분야 |
분자전자 부문위원회 |
제목 |
Effect of side chain structure in Polyimide Gate Insulators on characteristics of OTFTs |
초록 |
Polyimide is one of the popular insulating materials widely used in electronics because of its excellent thermal, mechanical and electrical properties. It is well known that the device performance of organic thin-film transistors (OTFTs) can be controlled by modifying surface properties of a gate insulator. In this study, we have prepared hybrid films from soluble polyimide and polyamic acid solution, and used them as a gate insulator for pentacene OTFTs. The surface properties of the newly prepared hybrid films was controlled by introducing soluble polyimide with nitrile group. The performance of OTFTs with the hybrid films having polar side chain (C-N group) was compared to that of OTFTs with a hybrid film containing non-polar long alkyl side chain (C18 group). We think that the performance can be affected by the morphology of pentacene deposited on both of the polyimide hybrids. It was characterized by atomic force microscopy and x-ray diffraction. |
저자 |
하선영1, 표승문1, 하재두1, 홍성권2, 이미혜1
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소속 |
1한국화학(연), 2충남대 |
키워드 |
polyimide; hybrid; gate insulator; OTFT
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E-Mail |
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