| 초록 |
Organic field-effect transistors are attractive building blocks for low-cost electronic devices such as radio-frequency identification tags, sensors, electronic paper, and back-plane circuits for active-matrix displays. Low-voltage operation of OFETs is necessary for practical applications, hence the need to develop gate dielectrics with a high areal capacitance. However, high-k materials require high annealing temperature or vapor deposition to ensure low leakage current. To address the above issues, a new polymetalloxanes dielectric materials deposited via a solution-phase process have been studied, which shows an appreciable stability to self-condensation and good spinnability. Organic thin film transistors with this gate dielectric was found to exhibit high performances with a low operating voltage. |
