| 학회 | 한국재료학회 |
| 학술대회 | 2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 | 17권 1호 |
| 발표분야 | B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 | Investigation of vanadium-based thin interlayer for Cu diffusion barrier |
| 초록 | Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and 250 ℃. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and 600 ℃ (1 hour). As a result, V-based thin interlayer between Cu-V film and SiO2 dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and 700 ℃ (12 hour) annealing. With this research, over 500 ℃ annealed barrier has large leakage current. However V-based diffusion barrier annealed at 400 ℃ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection. |
| 저자 | 한동석, 박종완, 문대용, 박재형, 문연건, 김웅선, 신새영 |
| 소속 | 한양대 |
| 키워드 | Copper interconnect; Diffusion barrier; RF magnetron Sputter; Thermal stability; Self-forming barrier |
