| 학회 | 한국재료학회 |
| 학술대회 | 2009년 가을 (11/05 ~ 11/06, 포항공과대학교) |
| 권호 | 15권 2호 |
| 발표분야 | H. Advanced Coating Techniques(첨단 코팅 기술) |
| 제목 | Unique method on Al doped ZnO thin films by atomic layer deposition |
| 초록 | In the optical devices, ZnO is an attractive material in that ZnO has a wide band gap (3.37 eV at room temperature) and a high exciton binding energy of 60 meV. Besides the metal-doped ZnO thin films are actively investigated to apply to the transparent conducting oxide (TCO). For better distribution of Al-dopants in ZnO films by atomic layer deposition, a modified deposition procedure was suggested as zinc–metal dopant–oxygen precursors exposure cycle because currently used alternating ZnO and metal oxides deposition procedure might form nanolaminate thin films. Aluminum doped ZnO thin films were prepared using diethyl zinc (C2H5)2Zn, H2O, and trimethyl aluminum (CH3)3Al as source materials. The Al doped ZnO thin films were deposited on substrates by ALD. The Al-doped ZnO films were deposited at 250 oC. The phase and crystallinity of the films were monitored by using glancing angle X-ray diffraction (XRD) with Cu Kα radiation. The sheet resistances of the films were measured by using four-point probe method and the optical transmittance measurements were carried out by using UV-vis-NIR spectrophotometer. In order to investigate the doping uniformity, the films were surveyed by secondary ion mass spectrometry (SIMS) using O2- ion source and chemical bonding state of Al-dopant was investigated by photoemission spectroscopy (PES) at Pohang Accelerator Laboratory (PAL) |
| 저자 | 김진용1, 박형호1, Stephen Golledge2, David C. Johnson3 |
| 소속 | 1연세대, 2CAMCOR, 3Univ. of Oregon |
| 키워드 | transparent conducting oxide; Al doped ZnO; ALD; |
