| 초록 |
We demonstrate a new device architecture for flexible vertical Schottky barrier transistors and logic gates based on graphene–organic semiconductor–metal heterostructures and ion gel gate dielectrics. The channel current was modulated by tuning the Schottky barrier height across the graphene–organic semiconductor junction under an applied external gate bias. The high specific capacitance of the ion gel gate dielectrics enabled the work function of the graphene to be readily modulated using a voltage below 1 V. Consequently, the devices showed well-behaved p- and n-type characteristics under low-voltage operation yielding high current densities and on–off current ratios. The simple structure of the unit transistor enabled successful fabrication of low-power logic gates based on assemblies of devices such as the complementary inverter, NAND, and NOR circuits on a plastic substrate. |
