| 학회 |
한국공업화학회 |
| 학술대회 |
2013년 가을 (10/30 ~ 11/01, 대전컨벤션센터) |
| 권호 |
17권 2호 |
| 발표분야 |
포스터-콜로이드.계면화학 |
| 제목 |
Photo-patternable polyimide gate insulator for 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiopene thin-film transistors |
| 초록 |
Surface properties of gate insulators strongly affect the device performance of organic thin-film transistors (OTFTs). To improve the performance of OTFTs, we have developed photo-sensitive polyimide gate insulator with fluorine groups. The polyimide gate insulator film could be easily patterned by selective UV exposure without any photoinitiator. The polyimide gate insulator film, fabricated at 130 ºC, has a dielectric constant of 2.8 at 10 kHz, and leakage current density of ＜1.6 x 10-10 A/cm2 while biased from 0 to 90 V. To investigate the potential of the polyimide with fluorine groups as a gate insulator, we fabricated C10-BTBT TFTs. The field-effect mobility and the on/off current ratio of the TFTs were measured to be 0.76 ± 0.09 cm2/Vs and ＞106, respectively. (This study was published in Organic Electronics, 2013, 14, 1777.) |
| 저자 |
장광석1, 원종명1, 김윤호1, 가재원1, 안택2, 이미혜1
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| 소속 |
1한국화학(연), 2경성대 |
| 키워드 |
유기절연체; 트랜지스터
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| E-Mail |
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