| 초록 |
Herein, we demonstrated a new patterning method via chemical imprinting with an ammonia-soaked PDMS stamp on the ZnO semiconductor films. The diffused ammonia liquid or gas from the PDMS stamp with fine structures selectively transformed the ZnO films to a water-soluble form (as [Zn(NH3)4-n(OH)n]2-n) at the contact surfaces, and these selectively transformed aqueous salt patterns were dissolved in water. Thus, the array of ZnO micro-patterns were easily fabricated and successfully applied to the active layers of TFTs. In addition, we fabricated the micro-patterns on Li doped ZnO semiconductor films, which have high carrier mobility and low temperature sintering at 300°C. The present study demonstrates the representative micro-patterned Li doped ZnO TFTs with the average field effect mobility of 4.16cm2•V-1•s-1, on/off current ratio of 8.3 x 107 and low gate leakage current on 33 TFTs array using this chemical imprinting. |
