| 초록 |
In this study, we report high performance organic thin-film transistors (TFTs) with high-k polymeric gate insulators blended with the polymeric cross-linker. To investigate the potential of the polymer-mixture as a gate insulator, we fabricated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) TFT and MIM (metal-insulator-metal) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) TFT devices. They showed excellent performance with a field-effect mobility and desirable leakage current density. The dielectric constant at 40 Hz and leakage current density at 3 MV/cm of the 60 nm-thick gate insulator were measured to be 6.3 and 5.7 × 10-11 A/cm2, The field-effect mobility, threshold voltage shift, and on/off current ratio of the C8-BTBT TFT with a 60 nm-thick polymer-mixture gate insulator were 1.67 cm2/V·s, ~0.1 V, and 5.8 × 107, respectively. |
