| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Effect of Oxygen Annealing in Resistive Switching of MnOx thin films |
| 초록 |
The resistive switching properties of the MnOx memory films were observed by oxygen annealing process. To investigate oxygen annealing related resistive switching properties, the as-grown and the oxygen-annealed MnOx films were used to fabricate the Ti/MnOx/Pt structure. From x-ray photoelectron spectroscopy measurements, we can conclude that the excess of oxygen by oxygen annealing of MnOx film leads to an increase of Mn4+ content at the MnOx surface with a subsequent change in the MnO+4/Mn+3 ratio at the MnOx surface. The oxygen-annealed MnOx film have the stable resistive switching properties, such as low switching voltage and window. The result suggests that the oxygen annealing dependence of the resistive switching behaviors of the MnOx films may be one of important clues to elucidate the resistive switching mechanism of the MnOx films. |
| 저자 |
Min Kyu Yang1, Jae-Wan Park2, Tae Kuk Ku1, Jeon-KooK Lee2
|
| 소속 |
1Thin Film Materials Research Center, 2Korea Institute of Science and Technology |
| 키워드 |
MnOx; ReRAM
|
| E-Mail |
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