| 초록 |
Recently, the Metal-insulator-metal (MIM) capacitor–like structures consisting of a wide variety of insulating perovskite oxides, such as manganites, titanates, and zirconates showed reversible resistive switching between two or multilevel resistance states induced by short voltage pulses. This transition metal (TM)-doped perovskite type oxides showing reversible resistance change has been attracting considerable attention due to potential for device application such as nonvolatile resistance random-access memories. We report reversible resistive switching effect of 0.2% Cr-doped SrTiO3 (Cr-STO) thin films grown on (La0.5,Sr0.5)CoO3/SrTiO3 (LSCO/STO) substrate by pulsed laser deposition. The structure analysis of 0.2%Cr doped STO single layer was accomplished by high resolution x-ray diffraction. Cr-STO exhibited only diffraction peaks from (00l) planes, indicating that single phase Cr-STO highly c-axis oriented. We demonstrated the electric-pulse-induced-reversible insulator-conductor transition (resistance change effect) in Cr-doped SrTiO3 thin films. The ration of resistance change [100×∆R/R=(Rmax-Rmin)/Rmin] is over 1366% at maximum. The switching behavior which can be repeated reproducibly for extended longer cycles, suggests that this MIM structure is feasible to act as nonvolatile memory elements. |
