| 학회 |
한국재료학회 |
| 학술대회 |
2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 |
11권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
크롬 이온 도핑된 SrZrO3 perovskite 박막의 Resistive Switching 과 메카니즘 |
| 초록 |
Cr-doped SrZrO3 thin films/SrRuO3 bottom electrode structure was fabricated on various substrates using pulsed laser deposition. After deposition of some kinds of top metal electrodes, electrical resistive switching behaviors and memory effects of the fabricated structure were investigated. We found that deposition conditions and kind of the top electrode highly affect on the switching behavior. It may be because the interface between the top electrode and SrZrO3: Cr perovskite plays an important role in the resistive switching mechanism. From I-V characteristics, a typical ON state resistance of 2-8 kΩ and a typical OFF state resistance of 100-350 kΩ were observed, but even ON/OFF resistance ratio higher than 10000 could be achieved when we used suitable substrates and fabrication conditions. These transition metal-doped perovskite thins films are expected for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility |
| 저자 |
Min Kyu Yang1, Dal-Young Kim2, Jae-Wan Park3, Kyuho Jung4, Tae Kuk Ko5, Jeon-Kook Lee3
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| 소속 |
1Thin Film Materials Research Center, 2KIST, 3Seoul, 4136-791 / Department of Electrical and Computer Engineering, 5Yonsei Univ. |
| 키워드 |
SrZrO3; Resistive Switching
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| E-Mail |
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