| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터) |
| 권호 |
42권 1호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Parameter Extraction Method for Disordered Organic Field-Effect Transistors |
| 초록 |
An organic field-effect transistor (OFET) is a reliable platform to investigate charge carrier transport characteristics of organic semiconductors. It has been established that the mobility μ in most OFETs depends on the gate voltage by an empirical power law due to disorder: μ∝(VGS-VT-VDS/2)α. However, a reliable extraction method of the threshold voltage VT and exponent of power law dependence α is still lacking in that α still remains as a fitting parameter with a strong sensitivity to VT and that contact resistance RC is often neglected. In this work, we propose a parameter extraction method for VT and α of the power law dependence for both μ and RC simultaneously and consistently. It enables physically based extraction of parameters in the linear regime transfer characteristics measured with a standard laboratory data acquisition system, showing a good endurance to measurement noise, a well as a rigorous analysis on the effect of disorder on transistor parameters. |
| 저자 |
정성엽1, Vincent Mosser2, Yvan Bonnassieux3, Gilles Horowitz3
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| 소속 |
1포항공과대, 2Itron, 3Ecole polytechnique-CNRS |
| 키워드 |
organic field-effect transistors; threshold voltage; mobility; parameter extraction method
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| E-Mail |
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